Measurement of electron density and temperature and their fluctuations using modified triple Langmuir probe grounded through finite resistance
Creators
- 1. Nagoya University, Department of Energy Engineering and Science, Nagoya, Aichi (Japan)
- 2. National Institute for Fusion Science, Toki, Gifu (Japan)
Description
In the triple Langmuir probe (T-LP) method, the electron temperature (Te) and density (ne) can be simultaneously derived from potential measurements of electrode of T-LP and the ion saturation current (Iis) where no current flows in the electrodes for potential measurements. In the case of aiming at measuring high-frequency fluctuations, however, the smaller load resistance of electrode is required for high frequency response. Then the finite current can flow in the measurement circuits of the floating potential (Vf) and the plus-biased potential (Vp). When the current becomes comparable to Iis, the Te derived from measured Vf and Vp without the current considerably deviates from an actual value. This would be significant for fairly low density plasma of the ne < ≅5 x 1017 m-3, and the correction of the finite current is necessary. A new relationship between Te and potential signals (Vf and Vp) where the finite current in the electrodes for Vf and Vp measurements is taken into account was derived, and experimentally confirmed the validity in the experiments of the Compact Helical System. (author)
Additional details
Publishing Information
- Journal Title
- Plasma and Fusion Research
- Journal Volume
- 2
- Journal Issue
- special issue
- Journal Page Range
- p. S1091.1-S1091.4
- ISSN
- 1880-6821
Conference
- Title
- 16. international Toki conference on advanced imaging and plasma diagnostics
- Acronym
- ITC-16
- Dates
- 5-8 Dec 2006
- Place
- Toki, Gifu (Japan)
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 40008875
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON DENSITY; ELECTRON TEMPERATURE; FLUCTUATIONS; FREQUENCY RESPONSE TESTING; LANGMUIR PROBE; MEASURING METHODS; PLASMA DIAGNOSTICS; PLASMA RADIAL PROFILES
- Descriptors DEC
- CURRENTS; ELECTRIC PROBES; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES; PROBES; TESTING; VARIATIONS