Published May 7, 2005
| Version v1
Journal article
The GMI effect in nanocrystalline FeCuNbSiB multilayered films with a SiO2 outer layer
Creators
- 1. Department of Physics, East China Normal University, Shanghai 200062 (China)
Description
The giant magneto-impedance (GMI) effect in nanocrystalline FeCuNbSiB multilayered films was investigated. The multilayered films were deposited by magnetron sputter equipment with an additional SiO2 outer layer. The GMI ratio of multilayered films varied with the annealing temperature due to the changing orientation of the magnetic moments. The maximum GMI frequency of the nanocrystalline state was lower than that of the amorphous state, decreasing from 12.3 to 5.45 MHz. Ageing experiments were carried out for films with and without the insulator layer. It was seen that the GMI ratio of the multilayer film with a covered SiO2 layer was preserved well even after ageing
Availability note (English)
Available online at http://stacks.iop.org/0022-3727/38/1351/d5_9_004.pdf or at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0022-3727/38/1351/d5_9_004.pdf; http://www.iop.org/;
- DOI
- 10.1088/0022-3727/38/9/004;
- PII
- S0022-3727(05)91441-1;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 38
- Journal Issue
- 9
- Journal Page Range
- p. 1351-1354
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36105944
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AGING; AMORPHOUS STATE; ANNEALING; COPPER COMPOUNDS; CRYSTALS; FILMS; IMPEDANCE; IRON COMPOUNDS; LAYERS; MAGNETIC MOMENTS; MAGNETRONS; MHZ RANGE 01-100; NANOSTRUCTURES; NIOBIUM COMPOUNDS; SILICON BORIDES; SILICON OXIDES
- Descriptors DEC
- BORIDES; BORON COMPOUNDS; CHALCOGENIDES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FREQUENCY RANGE; HEAT TREATMENTS; MHZ RANGE; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS