Published 1970 | Version v1
Book Metadata-only

Disorder produced during 11B and 12C implantation in silicon

Creators

  • 1. North American Rockwell Corp., Los Angeles, Calif. (USA)

Description

no abstract available

Additional details

Publishing Information

Publisher
Peter Peregrinus Limited.
Imprint Place
Stevenage
Imprint Title
European conference on ion implantation
Imprint Pagination
p. 227-230.

Conference

Title
European conference on ion implantation.
Dates
7 Sep 1970.
Place
Reading.

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
2010322
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Progress Report
Descriptors DEI
AMORPHOUS STATE; ATOMIC NUMBER; BACKSCATTERING; BORON COMPOUNDS; BORON 10; BORON 11; CARBON COMPOUNDS; CARBON 12; CURRENTS; DIFFUSION; ION CHANNELING; ION IMPLANTATION; IONS; KEV RANGE 10-100; KEV RANGE 100-1000; KRYPTON COMPOUNDS; PROTON BEAMS; QUANTITY RATIO; SEMICONDUCTORS; SILICON; TEMPERATURE
Descriptors DEC
ANISOTROPY; ATOMS; BEAMS; BOMBARDMENT; CRYSTALLIZATION; CRYSTALS; IMPURITIES; ION BEAMS; KEV RANGE; LATTICES; MOTION; SCATTERING