Hydrothermal synthesis porous silicon/tungsten oxide nanorods composites and their gas-sensing properties to NO2 at room temperature
Description
Highlights: • Porous silicon is prepared (PS) by a double groove electrochemical etching method. • PS/WO3 nanorods composite is synthesized by a seed-induced hydrothermal method. • The morphology of WO3 nanorods depends on the annealing temperature of seed layers. • The results show a high response and good selectivity to NO2 at room temperature. - Abstract: In this paper, well-ordered one-dimensional single crystalline hexagonal WO3 nanorods were synthesized directly on the porous silicon substrates by a seed-induced hydrothermal method without using any template, catalyst. And the effect of the annealing temperature of WO3 seed layers on the microstructure and NO2-sensing properties was studied. The morphology and crystal structure of the porous silicon/WO3 nanorods composites were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The gas-sensing properties of the porous silicon/WO3 nanorods composite gas sensors to NO2 with the concentration ranging from 100 ppb to 3 ppm were examined. The results indicate that well-ordered WO3 nanorods can greatly improve the gas-sensing properties of the sensor. The sensor exhibited a high response (∼3.38) and excellent selectivity toward 1 ppm NO2 at room temperature. And the NO2-sensing mechanism of this sensor was further explained.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2015.06.064Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2015.06.064;
- PII
- S0169-4332(15)01399-9;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 353
- Journal Page Range
- p. 79-86
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48017457
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CATALYSTS; CONCENTRATION RATIO; CRYSTAL STRUCTURE; ELECTROCHEMISTRY; HYDROTHERMAL SYNTHESIS; LAYERS; MICROSTRUCTURE; MONOCRYSTALS; MORPHOLOGY; NANOSTRUCTURES; NITROGEN DIOXIDE; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY; SENSORS; SILICON; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN OXIDES; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; CHEMISTRY; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; DIMENSIONLESS NUMBERS; ELECTRON MICROSCOPY; ELEMENTS; MATERIALS; MICROSCOPY; NITROGEN COMPOUNDS; NITROGEN OXIDES; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; SCATTERING; SEMIMETALS; SYNTHESIS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.