Published 1987 | Version v1
Book Metadata-only

Stability of amorphous silicon alloy triple-junction solar cells and modules

Creators

  • 1. Mitsubishi Electric Corp., Hyogo, Japan

Description

Results on reliability test for amorphous silicon alloy triple-junction solar cells and modules are described. It has been found that, for a-SiGe:H pin cells, reduction of the stress in the film is of first importance for stability. Application of low-temperature-deposited microcrystalline p-layer for each sub cell and of thinner i-layers for the middle and the bottom cells improves stability of triple-junction cells, by enhancing the electric field in the i-layers

Additional details

Publishing Information

Publisher
American Institute of Physics.
Imprint Place
New York, NY (USA)
Imprint Title
Stability of amorphous silicon alloy materials and devices
Journal Page Range
p. 119-125.

Conference

Title
International conference on stability of amorphous silicon alloy materials and devices.
Dates
28-30 Jan 1987.
Place
Palo Alto, CA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
19021791
Subject category
S36: MATERIALS SCIENCE; S42: ENGINEERING;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
AMORPHOUS STATE; EFFICIENCY; EXPERIMENTAL DATA; FABRICATION; GERMANIUM ALLOYS; HYDROGENATION; LAYERS; PHOTOCONDUCTIVITY; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SILICON SOLAR CELLS; STABILITY; TIME DEPENDENCE; VISIBLE RADIATION
Descriptors DEC
ALLOYS; CHEMICAL REACTIONS; DATA; DIRECT ENERGY CONVERTERS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; EQUIPMENT; INFORMATION; NUMERICAL DATA; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SOLAR CELLS