Fabrication of p-type CUINSE2 thin film by MBD using ECR excited nitrogen ion source

Polycrystalline CuInSe2 thin films were prepared by coevaporation of the elements under the irradiation of nitrogen ions excited by ECR plasma. Nitrogen atoms were doped uniformly in the obtained CuInSe2 films according to the SIMS analysis. The films showed p-type conduction even in the slightly In-rich region where the coevaporation films without the irradiation of nitrogen atoms showed n-type conduction. These results, included in this paper, show that p-type CuInSe2 thin films even in the slightly In-rich region can be fabricated by the irradiation of ECR excited nitrogen ions during its ternary coevaporation process