Charge-imbalanced polaritons
Creators
- 1. Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, Madrid (Spain)
Description
Full text: Recent technological progress has led to precise and efficient manipulation of electronic and optical properties of semiconductor solid-state devices. Noticeable examples include GaAs heterostructures, while, more recently, transition metal dichalcogenide (TMDC) monolayers have emerged as ideal materials for optoelectronic devices. Crucially, these structures have been recently embedded into planar optical cavities, allowing to study the interplay between strong light-matter coupling and electronic doping. This opens the prospect to generate and control novel strongly correlated phases between exciton-polaritons and 2D electron system. In this presentation, I will consider a charge-imbalanced mixture of electrons and holes in either doped single quantum wells or bilayers, strongly coupled to a cavity mode. I will discuss the occurrence of different coherent phases following the competition between long-ranged Coulomb interactions, Pauli blocking and the strong coupling to light. (author)
Additional details
Identifiers
Publishing Information
- Imprint Title
- 10"t"h International Conference on Spontaneous Coherence in Excitonic Systems 2020. Conference Abstract Book
- Imprint Pagination
- 93 p.
- Journal Page Range
- p. 28
- Report number
- INIS-AU--0097
Conference
- Title
- 10. International Conference on Spontaneous Coherence in Excitonic Systems
- Acronym
- ICSCE10
- Dates
- 28-31 Jan 2020
- Place
- Melbourne, VIC (Australia)
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 52073241
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COULOMB FIELD; CRYSTAL DEFECTS; EXCITONS; GALLIUM ARSENIDES; QUANTUM WELLS; SEMICONDUCTOR DEVICES; STRONG-COUPLING MODEL; TRANSITION ELEMENT ALLOYS
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELECTRIC FIELDS; GALLIUM COMPOUNDS; MATHEMATICAL MODELS; NANOSTRUCTURES; PARTICLE MODELS; PNICTIDES; QUASI PARTICLES
Optional Information
- Notes
- 1 fig.