Published 2001
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Internal Charge Amplification at High Ionization Densities in Silicon Detectors
- 1. The Andrzej Soltan Institute for Nuclear Studies, Otwock-Swierk (Poland)
Description
no abstract available
Files
32042473.pdf
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(36.7 kB)
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Additional details
Publishing Information
- Imprint Place
- Otwock-Swierk (Poland)
- Imprint Title
- Annual Report 2000
- Imprint Pagination
- 198 p.
- Journal Page Range
- p. 63
- ISSN
- 1232-5309
- Report number
- INIS-PL--0102
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 32042473
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Progress Report, No Abstract
- Descriptors DEI
- CALIFORNIUM 252; ELECTRONIC EQUIPMENT; MANUFACTURING; PROGRESS REPORT; RADIATION SOURCES; SI SEMICONDUCTOR DETECTORS; SURFACE BARRIER DETECTORS; TESTING; VACUUM SYSTEMS
- Descriptors DEC
- ACTINIDE NUCLEI; ALPHA DECAY RADIOISOTOPES; CALIFORNIUM ISOTOPES; DOCUMENT TYPES; EQUIPMENT; EVEN-EVEN NUCLEI; HEAVY NUCLEI; ISOTOPES; MEASURING INSTRUMENTS; NUCLEI; RADIATION DETECTORS; RADIOISOTOPES; SEMICONDUCTOR DETECTORS; SPONTANEOUS FISSION RADIOISOTOPES; YEARS LIVING RADIOISOTOPES