Published September 1982
| Version v1
Journal article
Comment to the short note by T.I. Kol'chenko, V.M. Lomako, I.E. Maronchuk ''Observation of the process of primary radiation-induced defect migration in GaAs''
Creators
- 1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Замечание к краткому сообщению Т. И. Кольченко, В. М. Ломако, И. Е. Марончук «Наблюдение процессов миграции первичных радиационных дефектов в GaAs»
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 16
- Journal Issue
- 9
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1714-1716
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 14773475
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ALPHA PARTICLES; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; FILMS; GALLIUM ARSENIDES; HALL EFFECT; LOW TEMPERATURE; MEDIUM TEMPERATURE; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; THICKNESS; TIME DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; DIMENSIONS; ELECTRICAL PROPERTIES; ENERGY RANGE; GALLIUM COMPOUNDS; HELIUM IONS; IONS; MEV RANGE; MOBILITY; PHYSICAL PROPERTIES; RADIATION EFFECTS
Optional Information
- Notes
- Letter-to-the-editor. For English translation see the journal Soviet Physics - Semiconductors (USA).