Ultrafast magnetization dynamics in diluted magnetic semiconductors
Creators
- 1. INRIA Nancy Grand-Est and Institut de Recherche en Mathematiques Avancees, 7 rue Rene Descartes, F-67084 Strasbourg (France)
- 2. Institut de Physique et Chimie des Materiaux de Strasbourg, 23 rue du Loess, F-67037 Strasbourg (France)
Description
We present a dynamical model that successfully explains the observed time evolution of the magnetization in diluted magnetic semiconductor quantum wells after weak laser excitation. Based on the pseudo-fermion formalism and a second-order many-particle expansion of the exact p-d exchange interaction, our approach goes beyond the usual mean-field approximation. It includes both the sub-picosecond demagnetization dynamics and the slower relaxation processes that restore the initial ferromagnetic order in a nanosecond timescale. In agreement with experimental results, our numerical simulations show that, depending on the value of the initial lattice temperature, a subsequent enhancement of the total magnetization may be observed within the timescale of a few hundred picoseconds.
Availability note (English)
Available from http://dx.doi.org/10.1088/1367-2630/11/7/073010Additional details
Identifiers
Publishing Information
- Journal Title
- New Journal of Physics
- Journal Volume
- 11
- Journal Issue
- 7
- Journal Page Range
- [12 p.]
- ISSN
- 1367-2630
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41054564
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- APPROXIMATIONS; COMPUTERIZED SIMULATION; DEMAGNETIZATION; EVOLUTION; EXCHANGE INTERACTIONS; EXCITATION; EXPANSION; FERMIONS; LASERS; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MEAN-FIELD THEORY; QUANTUM WELLS
- Descriptors DEC
- CALCULATION METHODS; ENERGY-LEVEL TRANSITIONS; INTERACTIONS; MATERIALS; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SIMULATION