Quantum spin Hall state in monolayer 1T'-WTe2
Creators
- 1. Shanghai Tech University, Shanghai (China). School of Physical Science and Technology
- 2. Chinese Academy of Sciences (CAS), Shanghai (China). State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology
- 3. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- 4. Stanford University, CA (United States). Geballe Laboratory for Advanced Materials
- 5. SLAC National Accelerator Laboratory, Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
Description
A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of a magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin–orbit coupling. By investigating the electronic structure of epitaxially grown monolayer 1T'-WTe2 using angle-resolved photoemission (ARPES) and first-principles calculations, we observe clear signatures of topological band inversion and bandgap opening, which are the hallmarks of a QSH state. Scanning tunnelling microscopy measurements further confirm the correct crystal structure and the existence of a bulk bandgap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Our results establish monolayer 1T'-WTe2 as a new class of QSH insulator with large band gap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs).
Availability note (English)
Available from http://www.osti.gov/pages/biblio/1373205; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo periodAdditional details
Identifiers
Publishing Information
- Journal Title
- Nature Physics (Print)
- Journal Volume
- 13
- Journal Issue
- 7
- Journal Page Range
- p. 683-687
- ISSN
- 1745-2473
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United States
- INIS RN
- 48097436
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; ENERGY GAP; HALL EFFECT; L-S COUPLING; MAGNETIC FIELDS; PHOTOEMISSION; QUANTUM STATES; TUNGSTEN TELLURIDES; TUNNEL EFFECT; TWO-DIMENSIONAL SYSTEMS
- Descriptors DEC
- CHALCOGENIDES; COUPLING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; EMISSION; INTERMEDIATE COUPLING; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SECONDARY EMISSION; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS
Optional Information
- Contract/Grant/Project number
- AC02-76SF00515; AC02-05CH11231; FA9550-14-1-0277; MAT2014-60996-R
- Funding organization
- USDOE Office of Science - SC, Basic Energy Sciences (BES) (SC-22) (United States); National Science Foundation (NSF) (United States); National Natural Science Foundation of China (NNSFC) (United States)
- Secondary number(s)
- OSTIID--1373205