Published November 4, 2013 | Version v1
Journal article

Single photon emission from site-controlled InGaN/GaN quantum dots

  • 1. Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)
  • 2. Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

Description

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10 K

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
103
Journal Issue
19
Journal Page Range
p. 192114-192114.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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