Published January 2006
| Version v1
Journal article
Flux transistor made from a single-layer niobium thin-film superconducting quantum interference device
Creators
- 1. Quantum Engineering Group, CSIRO, Division of Industrial Physics, PO Box 218, Lindfield, NSW 2070 (Australia)
Description
A micrometre-size Josephson vortex flow transistor is demonstrated experimentally. The drain-source of this device is the output of a single-layer Nb superconducting quantum interference device (SQUID) with a nanometre-size hole, forming a nanoSQUID. The device input is a Nb strip, which is closely coupled to the nanoSQUID. The change of the input current induces a change in the magnetic flux coupling to the nanoSQUID, and hence modulates the current-voltage characteristics of the nanoSQUID. The current gain and transresistance of the device were investigated by evaluating the mutual coupling and the dynamic resistance of the nanoSQUID. A current gain of 0.3 and a transresistance >1 Ω were achieved
Availability note (English)
Available online at http://stacks.iop.org/0953-2048/19/27/sust6_1_005.pdf or at the Web site for the journal Superconductor Science and Technology (ISSN 1361-6668) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0953-2048/19/27/sust6_1_005.pdf;
- DOI
- 10.1088/0953-2048/19/1/005;
- PII
- S0953-2048(06)06580-8;
Publishing Information
- Journal Title
- Superconductor Science and Technology
- Journal Volume
- 19
- Journal Issue
- 1
- Journal Page Range
- p. 27-31
- ISSN
- 0953-2048
- CODEN
- SUSTEF
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37061562
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COUPLING; ELECTRIC POTENTIAL; HOLES; LAYERS; MAGNETIC FLUX; NIOBIUM; SQUID DEVICES; THIN FILMS; TRANSISTORS; VORTEX FLOW
- Descriptors DEC
- ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; FLUID FLOW; FLUXMETERS; MEASURING INSTRUMENTS; METALS; MICROWAVE EQUIPMENT; REFRACTORY METALS; SEMICONDUCTOR DEVICES; SUPERCONDUCTING DEVICES; TRANSITION ELEMENTS