Published October 25, 1985
| Version v1
Journal article
Behaviour of hard gamma radiation part of 4,4 GeV electrons in oriented diamond crystal
Description
Radiation as a result of electron transit near crystal axis is observed. The radiation yield near the upper sectrum boundary, both in the case of axis and in plane in contrast to the known predictions, does not exceed the level of disoriented crystal
Additional details
Additional titles
- Original title (Russian)
- Поведение жесткой части γ-излучения электронов с энергией 4,4 GehV в ориентированном кристалле алмаза
Publishing Information
- Journal Title
- Pis'ma Zh. Ehksp. Teor. Fiz.
- Journal Volume
- 42
- Journal Issue
- 8
- Series
- Pis'ma Zh. Ehksp. Teor. Fiz.
- Journal Page Range
- 325-327
- ISSN
- 0370-274X
- CODEN
- PZETA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 17053010
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DIAMONDS; ELECTRON CHANNELING; GAMMA SPECTRA; GEV RANGE 01-10; INCIDENCE ANGLE; MONOCRYSTALS; ORIENTATION; SYNCHROTRON RADIATION
- Descriptors DEC
- BREMSSTRAHLUNG; CARBON; CHANNELING; CRYSTALS; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; GEV RANGE; MINERALS; NONMETALS; RADIATIONS; SPECTRA
Optional Information
- Notes
- For English translation see the journal JETP Letters (USA).