Published September 1993 | Version v1
Journal article

Oxygen tracer diffusion in La2-xSrxCuO4-y single crystals

  • 1. Massachusetts Inst. of Tech., Cambridge, MA (United States). Crystal Physics and Optical Electronics Lab., Center for Materials Science and Engineering
  • 2. Max-Planck-Inst. fuer Festkoerperforschung (Germany)

Description

The tracer diffusion of 18O in La2-xSrxCuO4-y single crystals (x = 0 to 0.12) has been measured from 400 to 700 C in 1 atm of oxygen using SIMS analysis. Evidence for diffusion by a vacancy mechanism was found at low strontium contents. Oxygen diffusivities for x ≥ 0.07 were depressed by several orders of magnitude below the diffusivity for undoped La2CuO4±y. The observed effects of strontium doping on oxygen diffusivity are discussed in terms of defect chemical models. The decreasing oxygen diffusivity with increasing strontium was attributed to the ordering of oxygen vacancies at large defect concentrations. A diffusion anisotropy, Dab/Dc, of ∼600 was also found at 500 C

Additional details

Publishing Information

Journal Title
Journal of the American Ceramic Society
Journal Volume
76
Journal Issue
9
Journal Page Range
p. 2363-2369.
ISSN
0002-7820
CODEN
JACTAW