Published 1988
| Version v1
Book
A comparison of (100) Hg1-xCdxTe and Hg1-xZnxTe grown by molecular beam epitaxy
Description
Films of HgCdTe with x ≤ 0.6 and of HgZnTe with x ≤ 0.26 have been grown by molecular beam epitaxy (MBE). Very high electron mobilities have been achieved for both materials in the small bandgap region. Hall mobilities at 77K reach 4.8x105cm2/V-s for Hg0.82Cd0.18Te, and 3.1x105 cm2/V-s for Hg0.87Zn0.13Te. HgCdTe growth was easily extended to the 1.5 - 3 μm wavelength range. Attempts to extend HgZnTe to these bandgaps were unsuccessful due to defects that are induced by surface roughness in high Zn-content films. These results suggest that HgCdTe is the more suitable material for MBE growth for near infrared applications
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 0-931837-70-7
- Imprint Title
- Epitaxy of semiconductor layered structures
- Imprint Pagination
- vp.
- Series
- Materials Research Society symposium proceedings. Volume 102.
- Journal Page Range
- p. 85-90.
Conference
- Title
- Epitaxy of semiconductor layered structures symposium.
- Dates
- 30 Nov - 4 Dec 1987.
- Place
- Boston, MA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20078926
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM TELLURIDES; CRYSTAL DEFECTS; EPITAXY; HALL EFFECT; MERCURY TELLURIDES; MOLECULAR BEAMS; NEAR INFRARED RADIATION; SURFACE PROPERTIES; THIN FILMS; ZINC TELLURIDES
- Descriptors DEC
- BEAMS; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; FILMS; INFRARED RADIATION; MERCURY COMPOUNDS; RADIATIONS; TELLURIDES; TELLURIUM COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-8711229--.