Published August 1, 2018 | Version v1
Journal article

A 0.7–7 GHz wideband reconfigurable receiver RF front-end in CMOS

  • 1. Institute of RF- and OE-ICs, School of Information Science and Engineering, Southeast University, Nanjing 210096 (China)
  • 2. S-TEK (Shanghai) High-Frequency Communication Technology Co. Ltd., Shanghai 201203 (China)

Description

A 0.7–7 GHz wideband RF receiver front-end SoC is designed using the CMOS process. The front-end is composed of two main blocks: a single-ended wideband low noise amplifier (LNA) and an in-phase/quadrature (I/Q) voltage-driven passive mixer with IF amplifiers. Based on a self-biased resistive negative feedback topology, the LNA adopts shunt-peaking inductors and a gate inductor to boost the bandwidth. The passive down-conversion mixer includes two parts: passive switches and IF amplifiers. The measurement results show that the front-end works well at different LO frequencies, and this chip is reconfigurable among 0.7 to 7 GHz by tuning the LO frequency. The measured results under 2.5-GHz LO frequency show that the front-end SoC achieves a maximum conversion gain of 26 dB, a minimum noise figure (NF) of 3.2 dB, with an IF bandwidth of greater than 500 MHz. The chip area is 1.67 × 1.08 mm2. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/39/8/085003

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
39
Journal Issue
8
Journal Page Range
[4 p.]
ISSN
1674-4926

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51067319
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
Descriptors DEI
AMPLIFIERS; BYPASSES; DESIGN; FEEDBACK; GHZ RANGE; MHZ RANGE; QUADRATURES; SWITCHES; TUNING
Descriptors DEC
ELECTRICAL EQUIPMENT; ELECTRONIC EQUIPMENT; EQUIPMENT; FREQUENCY RANGE