Published November 2005 | Version v1
Journal article

Local photocurrent detection on InAs wires by conductive AFM

  • 1. Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
  • 2. Semiconductors Research Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan)

Description

Local photocurrent detection has been performed by contact mode atomic force microscopy (AFM) with a conductive tip under laser illumination on InAs wires on GaAs. We adopted a piezoresistive cantilever deflection sensor to avoid the influence of an extra laser light which is conventionally used in a cantilever deflection sensor system for AFM. In this study, we measured the photocurrent from the InAs wires on a GaAs substrate and investigated its dependences on the wavelength of an incident laser light and on bias voltage

Additional details

Identifiers

DOI
10.1016/j.ultramic.2005.06.029;
PII
S0304-3991(05)00132-4;

Publishing Information

Journal Title
Ultramicroscopy (Amsterdam)
Journal Volume
105
Journal Issue
1-4
Journal Page Range
p. 137-142
ISSN
0304-3991
CODEN
ULTRD6

Conference

Title
6. international conference on scanning probe microscopy, sensors and nanostructures
Acronym
SPM 2004
Dates
24-26 May 2004
Place
Beijing (China)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37043123
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; ILLUMINANCE; INDIUM ARSENIDES; LASERS; PHOTOCURRENTS; SPECTROSCOPY; SUBSTRATES; WAVELENGTHS; WIRES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRIC CURRENTS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MICROSCOPY; PNICTIDES

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.