Published March 2016 | Version v1
Journal article

Electrical degradation of double-Schottky barrier in ZnO varistors

  • 1. The State Key Lab of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084 (China)

Description

Researches on electrical degradation of double-Schottky barrier in ZnO varistors are reviewed, aimed at the constitution of a full picture of universal degradation mechanism within the perspective of defect. Recent advances in study of ZnO materials by atomic-scale first-principles calculations are partly included and discussed, which brings to our attention distinct cognition on the native point defects and their profound impact on degradation.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Advances
Journal Volume
6
Journal Issue
3
Journal Page Range
p. 030701-030701.17
ISSN
2158-3226
CODEN
AAIDBI

Optional Information

Notes
(c) 2016 Author(s)