Published March 2016
| Version v1
Journal article
Electrical degradation of double-Schottky barrier in ZnO varistors
Creators
- 1. The State Key Lab of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084 (China)
Description
Researches on electrical degradation of double-Schottky barrier in ZnO varistors are reviewed, aimed at the constitution of a full picture of universal degradation mechanism within the perspective of defect. Recent advances in study of ZnO materials by atomic-scale first-principles calculations are partly included and discussed, which brings to our attention distinct cognition on the native point defects and their profound impact on degradation.
Additional details
Identifiers
- DOI
- 10.1063/1.4944485;
Publishing Information
- Journal Title
- AIP Advances
- Journal Volume
- 6
- Journal Issue
- 3
- Journal Page Range
- p. 030701-030701.17
- ISSN
- 2158-3226
- CODEN
- AAIDBI
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48057760
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DEFECTS; DIFFUSION BARRIERS; ELECTRICAL PROPERTIES; POINT DEFECTS; REVIEWS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR RESISTORS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DOCUMENT TYPES; ELECTRICAL EQUIPMENT; EQUIPMENT; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RESISTORS; SEMICONDUCTOR DEVICES; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2016 Author(s)