Published 2005
| Version v1
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Conductivity of thermoresistor VO2 during γ-irradiation
Creators
- 1. NAN Ukrainy, Inst. Khimii Poverkhnosti, Kiev (Ukraine)
Description
no abstract available
Files
36085327.pdf
Files
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Additional details
Additional titles
- Original title (Russian)
- Проводимост' терморезистора VO
Publishing Information
- Publisher
- ONTI GEOKHI RAN
- Imprint Place
- Moscow (Russian Federation)
- Imprint Title
- IV Bach conference on radiation chemistry. Abstracts of reports
- Imprint Pagination
- 152 p.
- Journal Page Range
- p. 59
- Report number
- INIS-RU--490
Conference
- Title
- 4. Bach conference on radiation chemistry
- Original Conference Title
- IV Bakhovskaya konferentsiya po radiatsionnoj khimii
- Dates
- 1-3 Jun 2005
- Place
- Moscow (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 36085327
- Subject category
- S38: RADIATION CHEMISTRY, RADIOCHEMISTRY AND NUCLEAR CHEMISTRY;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- DOSE RATES; ELECTRIC CONDUCTIVITY; GAMMA RADIATION; RADIATION DOSES; RADIATION EFFECTS; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THERMISTORS; VANADIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; DOSES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS
Optional Information
- Notes
- 1 ref.;2 figs. Imprint:This conference was conducted in the framework of the conference Physico-chemical foundations of new technologies of XXI century;IV Bakhovskaya konferentsiya po radiatsionnoj khimii. Tezisy dokladov