Influence of O-Co-O layer thickness on the thermal conductivity of NaxCo2O4 studied by positron annihilation
- 1. Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China)
- 2. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)
Description
Nominal stoichiometric NaxCo2O4 (x = 1.0, 1.2, 1.4, 1.6, 1.8, and 2.0) polycrystals were synthesized by a solid-state reaction method. They were further pressed into pellets by the spark plasma sintering. The crystal structure and morphology of NaxCo2O4 samples were characterized by X-ray diffraction and scanning electron microscopy measurements. Good crystallinity and layered structures were observed for all the samples. Positron annihilation measurements were performed for NaxCo2O4 as a function of Na content. Two lifetime components are resolved. τ1 is attributed mainly to positron annihilation in the O-Co-O layers and shifts to Na layers only in the H3 phase. The second lifetime τ2 is due to positron annihilation in vacancy clusters which may exist in the Na layers or grain boundary region. The size of vacancy clusters grow larger but their concentration decreases with increasing Na content in the range of 1.0 < x < 1.8. The thickness of O-Co-O layer also shows continuous increase with increasing Na content, which is reflected by the increase of τ1. The thermal conductivity κ, on the other hand, shows systematic decrease with increasing Na content. This suggests that the increasing spacing of O-Co-O layer could effectively reduce the thermal conductivity of NaxCo2O4
Additional details
Identifiers
- DOI
- 10.1063/1.4926763;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 118
- Journal Issue
- 3
- Journal Page Range
- p. 035102-035102.8
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47060869
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ABUNDANCE; ELECTRON-POSITRON INTERACTIONS; GRAIN BOUNDARIES; LAYERS; PLASMA; POLYCRYSTALS; PRESSES; SCANNING ELECTRON MICROSCOPY; SINTERING; SPECTROSCOPY; STOICHIOMETRY; THICKNESS; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CRYSTALS; DIFFRACTION; DIMENSIONS; ELECTRON MICROSCOPY; FABRICATION; INTERACTIONS; LEPTON-LEPTON INTERACTIONS; MICROSCOPY; MICROSTRUCTURE; PARTICLE INTERACTIONS; SCATTERING
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC