Published July 2015 | Version v1
Journal article

Electrical and photoelectrical properties of epitaxial films (GaAs)1-x-y(Ge2)x(ZnSe)y

  • 1. Andizhan State University, Andizhan (Uzbekistan)
  • 2. AS RU, Physical-technical institute, Tashkent (Uzbekistan)
  • 3. AS RU, Institute of Nuclear Physics, Tashkent (Uzbekistan)

Description

The possibility of growing a solid solution (GaAs)1-x-y(Ge2)x(ZnSe)y on arsenide-gallium substbrates by liquid phase epitaxy from a tin solution-melt is shown. With studies of current-voltage and spectral characteristics of layers at 300 K a number of plots in which the current-voltage dependence is described by the type J ~ Vα with different values of the indicator are detected. This type of current-voltage characteristic and features of the spectral dependence of photosensitivity are due to the formation of various complexes of charged components. (authors)

Additional details

Additional titles

Original title (Russian)
Электрические и фотоэлектрические свойства эпитаксиал&апос;ных пленок (GaAs)<суб>1-x-ы</суб>(Ге<суб>2</суб>)<суб>x</суб>(ZnSe)<суб>ы</суб>

Publishing Information

Journal Title
Uzbekiston Fizika Zhurnali
Journal Volume
17
Journal Issue
4
Journal Page Range
p. 218-224
ISSN
1025-8817

Optional Information

Notes
15 refs., 4 figs.