Total dose homogeneity study of the 108A operational amplifier

This study investigated the homogeneity of total dose degradation of 108A-type operational amplifiers at various traceability levels. Hardness varibility was compared at the diffusion lot, wafer and subwafer levels for breakout transistors as well as complete circuits, and provides a basis for selecting sampling and control procedures for hardness assurance. The study also showed that lower specification devices from the same wafer or diffusion lot could be used as radiation test samples to determine the hardness of the low yield 108A devices