Published January 2015
| Version v1
Journal article
Junction-Temperature Measurement in InAs/InP(100) Quantum-Dot Lasers
- 1. Department of Electronic Communication and Technology, Shenzhen Institute of Information Technology, Shenzhen 518172 (China)
- 2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
- 3. Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Department of Physics, Qufu Normal University, Qufu 273165 (China)
Description
We report on the measurement of junction temperature of the InAs/InP(100) quantum dot lasers working in the 1.55 μm wavelength region. The measurement is based on analyzing the temperature induced mode shift of the Fabry—Perot cavity. Under pulsed operation mode, more than 20°C junction temperature rise is measured for the quantum-dot (QD) laser when the duty cycle is increased from 1% to 95%. For a reference quantum well laser, the junction temperature rise is obtained as only around 3°C. The large junction temperature rise might be a crucial factor to improve the performance of QD lasers
Availability note (English)
Available from http://dx.doi.org/10.1088/0256-307X/32/1/014208Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 32
- Journal Issue
- 1
- Journal Page Range
- [4 p.]
- ISSN
- 0256-307X
- CODEN
- CPLEEU
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48018842
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CONNECTORS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LASERS; PULSES; QUANTUM DOTS; QUANTUM WELLS; TEMPERATURE MEASUREMENT; WAVELENGTHS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CONDUCTOR DEVICES; ELECTRICAL EQUIPMENT; EQUIPMENT; INDIUM COMPOUNDS; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES