Published 1996
| Version v1
Miscellaneous
The dose distributions of γ ray in the silicon in and near the interfaces of silicon and various materials
- 1. Academia Sinica, Urumqi (China). Xinjiang Inst. of Physics
Description
The depth dose distributions of γ ray in the silicon in and near the interfaces of silicon and various materials, such as gold, have been studied. The dose distributions have been compared with equilibrium doses in the homogeneous silicon material, and considerable dose gradient distributions were obtained. In the case of silicon adjacent to high atomic numbered material, dose enhancement effects have been observed in and near the interfaces. The dose gradient distributions were explained by photoelectron effect, Auger effect and secondary electron transport mechanism of the low energy scattering photons
Additional details
Publishing Information
- Imprint Title
- Proceedings of 8. national conference on nuclear electronic and nuclear detection technology: Pt.2
- Imprint Pagination
- 338 p.
- Journal Page Range
- p. 562-566.
Conference
- Title
- 8. national conference on nuclear electronics and nuclear detection technology.
- Dates
- 2-7 Dec 1996.
- Place
- Zhuhai, GD (China).
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 28074829
- Subject category
- S07: ISOTOPES AND RADIATION SOURCES; S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- ATOMIC NUMBER; AUGER EFFECT; DEPTH DOSE DISTRIBUTIONS; ELECTRONS; GAMMA RADIATION; INTERFACES; IONIZATION CHAMBERS; PHOTOELECTRIC EFFECT; RADIATION TRANSPORT; SECONDARY BEAMS; SILICON
- Descriptors DEC
- BEAMS; DISTRIBUTION; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; IONIZING RADIATIONS; LEPTONS; MEASURING INSTRUMENTS; RADIATION DETECTORS; RADIATION DOSE DISTRIBUTIONS; RADIATIONS; SEMIMETALS; SPATIAL DISTRIBUTION; SPATIAL DOSE DISTRIBUTIONS