Nano-sized Domain Wall Pinning Effects in Dilute Cu-Doped Perovskite LaMn1-xCuxO3 Manganites
- 1. Department of Physics, Shanghai University, Shanghai 200444 (China)
Description
Magnetic properties of Cu-doped LaMn1-xCuxO3 (x=0.05-0.30) systems are carefully studied in the temperature range of 2–300 K. A visible unexpected drop is observed in the ac susceptibility and the zero-field cooled dc magnetization curves for the dilute x ≤0.10 near 100K, which depends on the measuring frequency and magnetic field. Measurements on frequency dependence of ac susceptibility, observation of magnetic relaxation, and the existence of critical field indicate that the anomaly can be attributed to the domain wall pinning effects. This is directly proven by the results of ball milled nano-sized powder counterparts compared with the bulk materials. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Availability note (English)
Available from http://dx.doi.org/10.1088/0256-307X/25/9/085Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 25
- Journal Issue
- 9
- Journal Page Range
- p. 3410-3413
- ISSN
- 0256-307X
- CODEN
- CPLEEU
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44124712
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; COPPER COMPOUNDS; CRITICAL FIELD; CRYSTAL STRUCTURE; DOPED MATERIALS; FREQUENCY DEPENDENCE; LANTHANUM COMPOUNDS; MAGNETIC FLUX; MAGNETIC SUSCEPTIBILITY; MAGNETIZATION; MANGANATES; NANOSTRUCTURES; POWDERS; RELAXATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K
- Descriptors DEC
- DIMENSIONLESS NUMBERS; EVALUATION; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MANGANESE COMPOUNDS; MATERIALS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS