Effect of ion bombardment angle on evolution of point defects distribution in copper at low temperature irradiation by Al+ ions

An evolution of the implanted ions and radiation point defects distributions in the Cu target, which is maintained at low temperature and irradiated by the Al+ ions at the various bombardment angles, was investigated by computer simulation using the SPURT.MP and CALCMULT codes. The energy of Al+ ions was 1 keV and the ion bombardment angle was varied in the range from 0 to 80 degree. The correlation of the implanted ions and point defects depending profiles modification on the ion bombardment angle was established. The maximum depth and distribution peak of the implanted ions, vacancies and interstitials in the copper target were determined for the different angles. Good agreements were found between the simulated data and both experimental data and computer results, which were obtained by the SRIM2006 code. It is shown that there is an optimal range of the ion bombardment angles, which provides the maximum concentration of the implanted ions and radiation point defects near the irradiated target surface. It is expected that the obtained results allow optimizing the ion bombardment parameters to obtain the modified target layers with the given properties