Published March 1996
| Version v1
Journal article
Amorphous hydrated silicon films deposited at elevated temperatures
- 1. A.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)
Description
The results for optical, electrical, and structural parameters of undoped a-Si:H films deposited at Ts=200-400 deg. C are presented. The reactor type (diode or triode), SiH4 content in the gas mixture, and the gases (Ar, He, and H2) were varied. Prepared at Ts=400 deg. C and under optimization of other conditions, the a-Si:H films is characterized as a device-quality material with a low hydrogen content (down to 3 at. %)
Additional details
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 30
- Journal Issue
- 3
- Journal Page Range
- p. 226-230
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35046605
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- AMORPHOUS STATE; ARGON; DEPOSITION; ELECTRICAL PROPERTIES; EXPERIMENTAL DATA; HELIUM; HYDRIDES; HYDROGEN; OPTICAL PROPERTIES; SEMICONDUCTOR DIODES; SILICON COMPOUNDS; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS
- Descriptors DEC
- DATA; ELEMENTS; FILMS; FLUIDS; GASES; HYDROGEN COMPOUNDS; INFORMATION; NONMETALS; NUMERICAL DATA; PHYSICAL PROPERTIES; RARE GASES; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 30, 405-414 (March 1996); (c) 1996 American Institute of Physics.