Published November 25, 2002
| Version v1
Journal article
On the effects of implantation temperature in helium implanted silicon
- 1. Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft (Netherlands)
- 2. Laboratoire de Metallurgie Physique UMR6630, Universite de Poitiers, SP2MI, Bd Marie et Pierre Curie, BP30960 Futuroscope-Chasseneuil Cedex (France)
Description
He+ ions were implanted into silicon with a fluence of 5x1016 cm-2 at different temperatures ranging from 473 to 1073 K. Samples were analyzed by thermal helium desorption spectroscopy and by transmission electron microscopy. As far as cavity formation is concerned, the behavior can be divided into three stages depending on the implantation temperature. However, it is found that helium release from cavities is governed by a single mechanism regardless of the implantation temperature
Additional details
Identifiers
- DOI
- 10.1063/1.1525059;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 81
- Journal Issue
- 22
- Journal Page Range
- p. 4201-4203
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35024272
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- DESORPTION; HELIUM; ION IMPLANTATION; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY; VOIDS
- Descriptors DEC
- ELECTRON MICROSCOPY; ELEMENTS; FLUIDS; GASES; MATERIALS; MICROSCOPY; NONMETALS; RARE GASES; SEMIMETALS; SORPTION; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2002 American Institute of Physics.