Published November 21, 2007
| Version v1
Journal article
ZnO thin films and light-emitting diodes
- 1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
Description
ZnO is attracting considerable attention for its possible application to light-emitting sources due to its advantages over GaN. We review the recent progress in the growth of ZnO epitaxial films, doping control, device fabrication processes including etching and ohmic contact formation, and finally the prospects for fabrication and characteristics of ZnO light-emitting diodes. (topical review)
Additional details
Identifiers
- DOI
- 10.1088/0022-3727/40/22/R01;
- PII
- S0022-3727(07)36265-7;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 40
- Journal Issue
- 22
- Journal Page Range
- p. R387-R412
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39035037
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL GROWTH; EPITAXY; ETCHING; FABRICATION; GALLIUM NITRIDES; LIGHT EMITTING DIODES; THIN FILMS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL GROWTH METHODS; FILMS; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SURFACE FINISHING; ZINC COMPOUNDS