Published August 25, 2005 | Version v1
Journal article

Characteristics of nano-thickness lead zirconate titanate thin film for high-density storage applications

  • 1. Advanced Materials and Components Lab., Korea Institute of Ceramic Engineering and Technology, Seoul 233-5 (Korea, Republic of)
  • 2. Microelectronics Lab, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600 (Korea, Republic of)

Description

We successfully fabricated lead zirconate titanate (PZT) films with film thickness of 70 nm using a modified solution combined with lead titanate (PTO) seed layer. Throughout various approaches, we have found that the microstructure of PZT film plays an important role in determining the hysteretic properties particularly below the thickness of 100 nm. We modified the ligands of precursors to improve the microstructure of thin PZT film. In addition, we also adopted a thin PTO seed layer to enhance the initial nucleation density. Finally, we could obtain good electric properties similar to those of 250 nm PZT. The hysteretic properties such as Q-V, and hysteresis loop seem to be excellent enough to operate at as low as 2 V, which is a prerequisite property for high-density storage applications

Additional details

Identifiers

DOI
10.1016/j.mseb.2005.04.025;
PII
S0921-5107(05)00249-7;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
122
Journal Issue
1
Journal Page Range
p. 12-19
ISSN
0921-5107
CODEN
MSBTEK

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.