Published 1980 | Version v1
Journal article

Singularities of magnetic quenching of positronium in semiconductors

  • 1. Birskij Gosudarstvennyj Pedagogicheskij Inst. (USSR)

Description

Characteristics of electron-positron annihilation in semiconductors in the presence of an external magnetic field are calculated with account for positronium production. Positronium atoms are supposed to be in two states: delocalized and localized (on defects) and to experience, besides pick-off annihilation, ortho-paraconversion (3S1 reversible 1S0) on free carriers. Numerical calculation results for the field H=15 kGs are presented. The field effect is shown to be sufficiently different for localized and delocalized positronium. For the localized positronium the effect of the field depends greatly on the nature of defects

Additional details

Additional titles

Original title (Russian)
Особенности магнитного тушения позитрония в полупроводниках

Publishing Information

Journal Title
Izv. Vyssh. Uchebn. Zaved., Fiz.
Journal Issue
no.11
Series
Izv. Vyssh. Uchebn. Zaved., Fiz.
ISSN
0021-3411

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
12614646
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNIHILATION; CRYSTAL DEFECTS; ELECTRON PAIRS; MAGNETIC FIELDS; NUMERICAL SOLUTION; POSITRONIUM; SEMICONDUCTOR MATERIALS
Descriptors DEC
CRYSTAL STRUCTURE; INTERACTIONS; PARTICLE INTERACTIONS

Optional Information

Notes
For English translation see the journal Soviet Physics Journal (USA).