Correlation of predicted and measured GaAs and Ge X-ray yields as a function of crystal orientation

Values of psisub(1/2) have been obtained for both X-rays and backscattered He+ ions in Ge and GaAs as a function of beam energy. Although the energy dependence is similar in each case, there is a consistent discrepancy in magnitude between the X-ray and backscattered results. Using calculations based on the Binary Encounter Approximation and normalized backscattered yields the predicted X-ray yields have been corrected for variations in the dechanneled particle flux with orientation. Results of a comparison of experimental and predicted yields are given. (Auth.)