Published August 13, 2008 | Version v1
Journal article

Theoretical modeling developed to evaluate the hardness and reduced modulus for the C/a-Si composite film using nanoindentation tests

  • 1. Department of Mechanical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)
  • 2. Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

Description

A general mechanical model, which is composed of the mechanical models employed to describe the contact behaviors and deformations arising in all layers (including the substrate), is successfully developed in the present study for multilayer specimens in order to evaluate the contact projected area by a theoretical model, and thus the hardness and reduced modulus, using nanoindentation tests. The governing differential equations for the depth solutions of the indenter tip formed at all layers of the specimen under their contact load are developed individually. The influence of the material properties of the substrate on a multilayer specimen's hardness and reduced modulus at various indentation depths can thus be evaluated. Transition and pop-in occurred at depths near, but still before, the C (top layer)/a-Si (buffer layer) interface and the a-Si/Si (substrate) interface, respectively. Using the present analysis, the depths corresponding to the transition and pop-in behaviors can be predicted effectively

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/19/32/325710

Additional details

Identifiers

DOI
10.1088/0957-4484/19/32/325710;
PII
S0957-4484(08)75523-5;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
19
Journal Issue
32
Journal Page Range
[13 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39111601
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CARBON; COMPOSITE MATERIALS; DEFORMATION; DIFFERENTIAL EQUATIONS; FILMS; HARDNESS; INTERFACES; LAYERS; NANOSTRUCTURES; SILICON; SIMULATION; SUBSTRATES
Descriptors DEC
ELEMENTS; EQUATIONS; MATERIALS; MECHANICAL PROPERTIES; NONMETALS; SEMIMETALS