Published July 1, 2012
| Version v1
Journal article
C–V and DLTS studies of radiation induced Si–SiO2 interface defects
Creators
- 1. Rudjer Boskovic Institute, 10000 Zagreb (Croatia)
- 2. Jozef Stefan Institute, 1000 Ljubljana (Slovenia)
Description
Interface traps at the Si–SiO2 interface have been and will be an important performance limit in many (future) semiconductor devices. In this paper, we present a study of fast neutron radiation induced changes in the density of Si–SiO2 interface-related defects. Interface related defects (Pb centers) are detected before and upon the irradiation. The density of interface-related defects is increasing with the fast neutron fluence.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nimb.2011.08.065Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2011.08.065;
- PII
- S0168-583X(11)00857-3;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 282
- Journal Page Range
- p. 59-62
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- European Materials Research Society symposium B 'Ion beam synthesis and modification of nanostructured materials and surfaces'
- Acronym
- EMRS 2011
- Dates
- 9-13 May 2011
- Place
- Nice (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44044096
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; FAST NEUTRONS; INTERFACES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SILICON; SILICON OXIDES; TRAPS
- Descriptors DEC
- BARYONS; CHALCOGENIDES; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; NEUTRONS; NUCLEONS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.