Transmission electron microscopy of Suzuki segregation in fcc alloys
Description
Transmission electron microscopy (TEM) observations concerning the temperature variation of the width of dissociated dislocations in fcc alloys have been reviewed with special reference to the segregation of solute atoms to the dissociated dislocations. Results of in-situ annealing in a high voltage electron microscope as well as a bulk annealing experiment have shown that noble-metal - base alloys can be divided into two groups: one group with solutes belonging to the IIIb group of the periodic table does not show any positive evidence for the Suzuki segregation, while the other group with solutes belonging to the IVb and Vb groups shows definitive evidence for the Suzuki segregation. This apparent difference in the segregation behaviour can be rationalized by a difference in atomic diffusivity of different solute atoms in these alloys; solute atoms belonging to the IVb or Vb group migrate much faster than those belonging to the IIIb group because of a large binding energy of vacancy-solute pairs. During irradiation by 1 MeV electrons, radiation-induced non-equilibrium segregation has been observed in Ag-Al, Ag-In, Cu-Si and Cu-Ge alloys. Mechanisms for the radiation-induced segregation are also discussed in terms of a large binding energy of vacancy-solute pairs for those alloys that contain IVb or Vb solutes. (author)
Additional details
Additional titles
- Augmented title (English)
- Including radiation-induced non-equilibrium segregation
Publishing Information
- Journal Title
- Res Mech.
- Journal Volume
- 11
- Journal Issue
- 3
- Series
- Res Mech.
- Journal Page Range
- 211-242
- ISSN
- 0143-0084
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 15061144
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ALLOYS; ANNEALING; BINARY ALLOY SYSTEMS; BINDING ENERGY; COPPER ALLOYS; DIFFUSION; DISLOCATIONS; DISSOCIATION; ELECTRONS; FCC LATTICES; GERMANIUM ALLOYS; IMPURITIES; INDIUM ALLOYS; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; SEGREGATION; SILICON ALLOYS; SILVER ALLOYS; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCO; VACANCIES
- Descriptors DEC
- ALLOY SYSTEMS; ALLOYS; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CUBIC LATTICES; ELECTRON MICROSCOPY; ELEMENTARY PARTICLES; ENERGY; ENERGY RANGE; FERMIONS; HEAT TREATMENTS; LEPTONS; LINE DEFECTS; MEV RANGE; MICROSCOPY; POINT DEFECTS; RADIATION EFFECTS