Published July 7, 2008 | Version v1
Journal article

Magnetoresistance of submicrometre multilayer Wheatstone bridges as a probe of magnetic reversal mechanism

  • 1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

Description

The magnetoresistance of elliptical NiFe/Cu/Co multilayer rings with deep submicrometre widths contacted in a Wheatstone bridge configuration has been characterized. The rings show large voltage signals corresponding to magnetic configurations in which either the Co or the NiFe layer is in a vortex state. This result indicates that asymmetrically placed 360 deg. domain walls can be present in the vortex states attained during the reversal of the magnetic layers. Minor loop cycling generates a range of possible remanent resistance levels in the rings, which makes these devices interesting candidates for multiple-bit-per-cell magnetic random access memory or for non-volatile programmable logic devices. (fast track communication)

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/41/13/132005

Additional details

Identifiers

DOI
10.1088/0022-3727/41/13/132005;
PII
S0022-3727(08)79903-0;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
41
Journal Issue
13
Journal Page Range
[4 p.]
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40043253
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ELECTRIC POTENTIAL; LAYERS; MAGNETORESISTANCE; PROBES; RANDOMNESS; SIGNALS
Descriptors DEC
ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES