Electrical and photoelectric characteristics of gallium oxide films obtained by RF magnetron sputtering

In order to investigate dependence of conductivity on the temperature and photoreponse of β-Ga₂O₃ thin films, films were grown by a radio frequency magnetron sputtering on sapphire substrates. The conductivity of films without annealing depends weakly on the temperature to 560 °C and increase exponentially at T >560 °C. After annealing at 900 °C growth region shifts to 350 °C. Films without annealing are solar-blind and have a photoresponse to illumination with a wavelength of 222 nm. (paper)