Powerful nanosecond ionic beams - a new possibilities for materials modification

Application of preliminary implantation of semiconductor crystals by the continuous ion beams (doping up to the doses 1018 cm-3) with following treatment by powerful ion beams (PIB) are allowing to form the epitaxial high-doped and highly-conducting layers. For example the rate of carriers concentration in silicon achieves the value 3·1021 cm-3, and 1020 cm-3 for gallium arsenide. It is shown, that using of the continuous ion implantation by iron ions with following treatment with PIB allows to form optically active layers with precipitants of the semiconductor iron disilicide in the silicon are radiating within 1.5 μm range - the window of the optical-fibre bond lines transparency