Published March 2007 | Version v1
Journal article

Luminescence of ZrO2 and HfO2 thin films implanted with Eu and Er ions

  • 1. Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia)

Description

A spectroscopic study of Eu- and Er-implanted ZrO2 and HfO2 thin films was performed. Photoluminescence (PL) of trivalent ions under band-to band excitation of the host was observed. Annealing up to 1100 C was required to maximize the PL signal intensity. The Eu3+ ion was used as a probe of local structure. The PL excitation spectra were recorded both for intrinsic and impurity-related emission. Different channels of indirect excitation of the RE ions were revealed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200673804

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
4
Journal Issue
3
Journal Page Range
p. 938-941
ISSN
1610-1634

Conference

Title
10. Europhysical conference on defects in insulating materials
Acronym
EURODIM 2006
Dates
10-14 Jul 2006
Place
Milan (Italy)

Optional Information

Notes
With 3 figs., 8 refs.. SICI: 1610-1634(200703)4:3<938::AID-PSSC200673804>3.0.TX;2-E