Published December 16, 1986
| Version v1
Journal article
Channeling in GaAs
Description
Depth profiles of light and heavy ions in a simplified GaAs lattice are calculated with a Monte Carlo method. In the simulation, similarly to the standard practice in ion implantation, the sample is tilted and rotated. Remarkable effects on the ion profiles are found to arise from the target orientation. (author)
Additional details
Additional titles
- Subtitle (English)
- A Monte Carlo simulation of low energy implants
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 98
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 517-520
- ISSN
- 0031-8965
- CODEN
- PSSAB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 18033817
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC NUMBER; DEPTH; GALLIUM ARSENIDES; ION BEAM TARGETS; ION BEAMS; ION CHANNELING; ION IMPLANTATION; KEV RANGE 10-100; MONTE CARLO METHOD; ORIENTATION; SELENIUM 79; SILICON 28 BEAMS; SPATIAL DISTRIBUTION; TIN 119
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CHANNELING; DAYS LIVING RADIOISOTOPES; DIMENSIONS; DISTRIBUTION; ENERGY RANGE; EVEN-ODD NUCLEI; GALLIUM COMPOUNDS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; KEV RANGE; MINUTES LIVING RADIOISOTOPES; NUCLEI; RADIOISOTOPES; SELENIUM ISOTOPES; STABLE ISOTOPES; TARGETS; TIN ISOTOPES; YEARS LIVING RADIOISOTOPES