Published December 2007 | Version v1
Journal article Metadata-only

Ferroelectric domain phenomena and growth kinetics of BaMgF4 single crystal by piezoresponse force microscopy

Creators

  • 1. State Key Laboratory of High Performance Ceramic and Superfine Structures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)
  • 2. Optronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

Description

Static and dynamic domain behavior of ferroelectric fluoride BaMgF4 single crystal was investigated using high-resolution piezoresponse force microscopy. High domain wall anisotropy was found in the as-grown BaMgF4 crystal. Antiparallel domain wall strain phenomena due to defects across the domain boundary were directly observed. The lateral domain growth in the inhomogeneous AFM tip field revealed the activation mechanism of the domain wall motion

Additional details

Identifiers

DOI
10.1088/0031-8949/2007/T129/024;
PII
S0031-8949(07)61665-24;

Publishing Information

Journal Title
Physica Scripta (Online)
Journal Volume
2007
Journal Issue
T129
Journal Page Range
p. 108-111
ISSN
1402-4896

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39028763
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANISOTROPY; ATOMIC FORCE MICROSCOPY; BARIUM FLUORIDES; CRYSTAL DEFECTS; CRYSTAL GROWTH; FERROELECTRIC MATERIALS; KINETICS; MAGNESIUM FLUORIDES; MONOCRYSTALS
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; BARIUM COMPOUNDS; CRYSTAL STRUCTURE; CRYSTALS; DIELECTRIC MATERIALS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; MAGNESIUM COMPOUNDS; MATERIALS; MICROSCOPY