Published January 16, 2024 | Version v1
Journal article

Magnetization-induced phase transitions on the surface of three-dimensional topological insulators

  • 1. International Center for Quantum Materials and School of Physics, Peking University, Beijing 100871, China
  • 2. Hefei National Laboratory, Hefei 230088, China

Description

From the low-energy model, the topological field theory indicates that the surface magnetization can open a surface gap in three-dimensional (3D) topological insulators (TIs), resulting in a half-quantized Hall conductance. Here, by employing the realistic lattice model, we show the occurrence of the surface phase transitions, accompanied by the sharp changes of the surface Chern number from 12 to 32, and finally to 12, in 3D TIs induced by surface magnetization. These surface phase transitions lead to the sudden jumps in the magneto-electric coefficient and the quantum Hall conductance, which are experimentally observable. Furthermore, we present the phase diagram that elucidates the behavior of the 3D TI surface Chern numbers under surface magnetization for different Z4 topological numbers. Our study highlights the presence of the new phases with broken bulk-boundary correspondence and enriches the understanding of the properties of TIs.

Additional details

Identifiers

DOI
10.1103/PhysRevB.109.045418;
Crossref Funder ID
10.13039/501100001809; 10.13039/501100002367;

Publishing Information

Journal Title
Physical Review B
Journal Volume
109
Journal Issue
4
Journal Page Range
9 pgs.
ISSN
1550-235X

Optional Information

Copyright
©2024 American Physical Society
Contract/Grant/Project number
12374034; 11921005; XDB28000000
Notes
Contact Email: Corresponding author: sunqf@pku.edu.cn; Record automatically processed
Funding organization
National Natural Science Foundation of China; Chinese Academy of Sciences