Exciton and polaron properties in GaxIn1-xAs ternary mixed crystals

Based on the pseudopotential method under the virtual crystal approximation that takes into account the effect of compositional disorder, the electron and heavy-hole effective masses and the dielectric constants in GaxIn1-xAs (0≤x≤1) have been calculated. The results are firstly used in the Wannier equation, which allowed the determination of the exciton reduced mass, binding energy and Bohr radius; then, the polaron properties have been investigated. In this respect, the Froehlich coupling parameter, Debye temperature and polaron effective mass are calculated and their dependence on the Ga concentration is examined. For InAs and GaAs, our results are generally in reasonable agreement with the known data in the literature, while for compositions x in the range 0-1, our treatment represents the first theoretical predictions. It is found that the exciton and polaron properties for compositions 0<x<1 differ from those of the parent compounds suggesting thus more diverse opportunities to describe most exciton and polaron properties in ternary mixed crystals of interest. - Highlights: → Exciton properties in ternary semiconductor alloys. → Polaron properties in ternary semiconductor alloys. → Quasiparticles in GaxIn1-x As mixed crystals.