Published December 2017 | Version v1
Journal article Metadata-only

Soft Magnetic Properties of HfxCo100−x Thin Films

Creators

  • 1. Ankara University, Department of Engineering Physics, Faculty of Engineering (Turkey)
  • 2. Recep Tayyip Erdoğan University, Department of Material Science and Nanotechnology Engineering, Faculty of Engineering (Turkey)

Description

HfxCo100−x thin films (in the atomic weight range of x = 30–36) were growth on Si (100) substrates by direct current (DC) magnetron sputtering method. Thin films produced with atomic compositions in this context depicted the amorphous structure. The films revealed soft magnetic properties and thus exhibited very low hysteresis along the hard-axis direction. Magnetic measurements indicated that Hf35Co65 thin film has the maximum saturation magnetization (1491 emu cm−3) at 300 K. Additionally, magnetization measurements show an increase in saturation magnetization value from 981 to 1491 emu cm−3 when the value of x varies between 30 and 35. The influence of varying sputtering pressure and film composition on soft magnetic properties are investigated and discussed in the present paper.

Additional details

Identifiers

DOI
10.1007/s10948-017-4168-4;

Publishing Information

Journal Title
Journal of Superconductivity and Novel Magnetism
Journal Volume
30
Journal Issue
12
Journal Page Range
p. 3537-3540
ISSN
1557-1939

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
50014951
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DIRECT CURRENT; HAFNIUM COMPLEXES; HYSTERESIS; MAGNETIC PROPERTIES; MAGNETIZATION; MAGNETRONS; MASS NUMBER; SPUTTERING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
COMPLEXES; CURRENTS; ELECTRIC CURRENTS; ELECTRON MICROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; PHYSICAL PROPERTIES; TRANSITION ELEMENT COMPLEXES

Optional Information

Copyright
Copyright (c) 2017 Springer Science+Business Media New York
Notes
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