Effect of ionization on the behavior of silicon in gallium arsenide subjected to electron-beam annealing

The method of capacitance-voltage characteristics was used to study the behavior of Si implanted into GaAs after a postimplantation electron-beam annealing for 10 s under a beam-power density of 7.6 W cm-2. The electron beam was incident on both the implanted and rear surfaces of the wafers. The reference samples were annealed thermally in a furnace for 30 min at 800 deg. C. It is shown that the diffusion coefficient D is more than three orders of magnitude larger in the case of electron-beam annealing of the implanted surface than in the case of thermal annealing and by almost two orders of magnitude larger than in the case of electron-beam annealing of the rear surface. It is assumed that these distinctions are caused by a long existence time of the high steady-state concentration of nonequilibrium electrons and holes due to their spatial separation