Interaction of gallium atoms with the surface of the quartz cell

The process of diffusion of gallium atoms into the walls of an atomic vapor containing quartz cell was experimentally examined. It has been shown that when the cell containing gallium vapor is heated to a temperature of 1080 degree C, the metal atoms diffuse into the walls of the cell. As a result, the gallium vapor pressure in the cell does not correspond to the tabular values for the given temperature. Only when the cell walls are saturated by diffused atoms, the density of metal vapor in the volume of the cell increases