Published August 1993
| Version v1
Journal article
Physical properties of GaSe solid solutions in Bi2Te3
Description
The electrophysical properties of monocrystals in solid solutions of the Bi2Te3-GaSe system containing 0.1, 0.5, 1, 3 and 5 mol.%GaSe have been studied in the 100-700 K interval. The activation energy of conduction has been evaluated. It may be inferred that the electron gas of samples was degenerated at room temperature. The values of relative chemical potential are calculated; temperature dependences of effective mass, concentration and charge carrier mobility are found. The mechanism for charge carrier scattering is valid
Additional details
Additional titles
- Original title (Russian)
- Физические свойства твердых растворов GaSe в Би
Publishing Information
- Journal Title
- Neorganicheskie Materialy
- Journal Volume
- 29
- Journal Issue
- 8
- Journal Page Range
- p. 1078-1081.
- ISSN
- 0002-337X
- CODEN
- NEOMB8
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26019849
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; BISMUTH TELLURIDES; CARRIER MOBILITY; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; GALLIUM SELENIDES; HALL EFFECT; MONOCRYSTALS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELECTRICAL PROPERTIES; ENERGY; GALLIUM COMPOUNDS; MATERIALS; MOBILITY; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE