Published January 1980
| Version v1
Journal article
Structural characterization of amorphous vanadium pentoxide thin films prepared by chemical vapour deposition (CVD)
Creators
- 1. Magyar Tudomanyos Akademia Biologiai Kutato Koezpontja, Szeged. Research Group on Luminescence and Semiconductors
Description
Amorphous vanadium pentoxide thin films were prepared by CVD of VOCl3 with H2O at room temperature. The amorphous-to-crystalline transition temperature of the material was found at about 2400C. The DTA curves and IR spectra showed that the films contained water. The V4+ content of the films was estimated from quantitative EPR measurements. The results verify that CVD is an appropriate method to produce near stoichiometric (V4+ content: 1.5-2.0%) amorphous vanadium pentoxide thin films. (orig.)
Additional details
Publishing Information
- Journal Title
- J. Non-Cryst. Solids
- Journal Volume
- 35/36
- Journal Issue
- pt.2
- Series
- J. Non-Cryst. Solids.
- Journal Page Range
- 1245-1248
- ISSN
- 0022-3093
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 12589874
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; CHEMICAL PREPARATION; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DIFFERENTIAL THERMAL ANALYSIS; ELECTRON SPIN RESONANCE; FILMS; INFRARED SPECTRA; ION DENSITY; TRANSITION TEMPERATURE; VANADIUM IONS; VANADIUM OXIDES
- Descriptors DEC
- ATOMIC IONS; CHALCOGENIDES; CHARGED PARTICLES; CHEMICAL COATING; DEPOSITION; IONS; MAGNETIC RESONANCE; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; RESONANCE; SPECTRA; SURFACE COATING; SYNTHESIS; THERMAL ANALYSIS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS