Published March 2017
| Version v1
Journal article
Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures
- 1. National Research Centre "Kurchatov Institute" (Russian Federation)
Description
Stacking faults and dislocations in InGaAs/InAlAs/InAs heterostructures have been studied by electron microscopy. The use of different techniques of transmission electron microscopy (primarily, highresolution dark-field scanning transmission electron microscopy) has made it possible to determine the defect structure at the atomic level.
Additional details
Identifiers
Publishing Information
- Journal Title
- Crystallography Reports
- Journal Volume
- 62
- Journal Issue
- 2
- Journal Page Range
- p. 265-269
- ISSN
- 1063-7745
- CODEN
- CYSTE3
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48093791
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM ARSENIDES; CRYSTALS; DEFECTS; DISLOCATIONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LINE DEFECTS; MICROSCOPY; PNICTIDES
Optional Information
- Copyright
- Copyright (c) 2017 Pleiades Publishing, Inc.